Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology

@article{Gadlage2011AlphaParticleAF,
  title={Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology},
  author={Matthew J. Gadlage and J. R. Ahlbin and Bharat L. Bhuva and Nicholas C. Hooten and Nathaniel A. Dodds and R. A. Reed and Lloyd W. Massengill and Ronald D. Schrimpf and Gyorgy Vizkelethy},
  journal={IEEE Transactions on Nuclear Science},
  year={2011},
  volume={58},
  pages={1093-1097}
}
Pulse widths of single-event transients produced by alpha particles in a 65-nm bulk CMOS technology are reported. The experimental setup and calibration of the alpha particle experiment is described in detail. A focused-ion beam is also utilized to explore how pulse broadening in the test circuit impacts the alpha particle SET measurements. The results of this work show that alpha particles are able to induce transient signals with a width of about 25 ps in this technology. 

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