All-Silicon Waveguide Avalanche Photodetectors With Ultrahigh Gain-Bandwidth Product and Low Breakdown Voltage

Abstract

We investigate the avalanche effect in 250 μm long silicon waveguides integrated with periodically interleaved p-n junctions. The surface state absorption is enhanced by reducing the waveguide width. Upon a bias voltage of -5.9 V, the measured responsivity is 2.33 A/W with a dark current of 0.78 μA. The avalanche gain is 284 and the 3-dB… (More)

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Cite this paper

@article{Zhu2014AllSiliconWA, title={All-Silicon Waveguide Avalanche Photodetectors With Ultrahigh Gain-Bandwidth Product and Low Breakdown Voltage}, author={Haike Zhu and Linjie Zhou and Yanyang Zhou and Qianqian Wu and Xinwan Li and Jianping Chen}, journal={IEEE Journal of Selected Topics in Quantum Electronics}, year={2014}, volume={20}, pages={226-231} }