Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium.


A hexagonal boron nitride monolayer with aligned orientations is grown on reusable semiconducting germanium. The number of primary orientations of the h-BN domains depends on the symmetry of the underlying crystal face, and Ge (110) gives rise to only two opposite orientations. The structures and electrical properties of grain boundaries between h-BN… (More)
DOI: 10.1002/smll.201501439