Investigation on Homogeneous Modeling of Gyroid Lattice Structures: Numerical Study in Static and Dynamic Conditions
- EngineeringKey Engineering Materials
The TPMS (triply periodic minimal surface) are receiving great attention for production of open cell scaffold structures, for example in biomedical applications. In this paper stretch-dominated…
Partial Oxidation of High Entropy Alloys. A Route Towards Nanostructured Ferromagnets?
- Materials ScienceSSRN Electronic Journal
The present work proposes a new approach to the development of nanostructured ferromagnetic composites based on the progressive oxidation of high entropy alloys. Sequential ‘subtraction’ of the…
DNN-based laughter synthesis
- Computer Science2019 International Conference on Control, Automation and Diagnosis (ICCAD)
This paper will perform an objective and subjective evaluation to ensure the performance of the DNN-based laughter synthesis, using deep neural network and recurrent neural network as a benchmark.
Understanding financial sustainability of ICT services for social and economic development using e3value
While it is generally acknowledged that ICT services are important for social and economic development of poor developing regions of the world, ICT services deployed in low resource environments…
Cross-Diffusion Waves as a Mesoscopic Uncertainty Relationship for Multi-Physics Instabilities
We propose a generic uncertainty relationship for cross-diffusion (quasi-soliton) waves triggered by local instabilities through Thermo-Hydro-Mechano-Chemical (THMC) coupling and cross-scale…
THMC instabilities and the Multiphysics of Earthquakes.
- Physics, Geology
Theoretical approaches to earthquake instabilities propose shear dominated instabilities as a source mechanism. Here we take a fresh look at the role of possible volumetric instabilities preceding a…
Tunable Holding-Voltage High Voltage ESD Devices
- Engineering2019 IEEE International Reliability Physics Symposium (IRPS)
Physical understanding of the interaction of junction depth and the location of different Drain-side N-type implants on the holding-voltage of LDNMOS is presented. Using N-type well implants to…