AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition

@inproceedings{Bayram2010AlNGaNDR,
  title={AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition},
  author={Can Bayram and Zahra Vashaei and Manijeh Razeghi},
  year={2010}
}
AlN/GaN double-barrier resonant tunneling diodes (RTDs) were grown by metal-organic chemical vapor deposition on sapphire. RTDs were fabricated via standard processing steps. RTDs demonstrate a clear negative differential resistance (NDR) at room temperature (RT). The NDR was observed around 4.7 V with a peak current density of 59 kA/cm2 and a peak-to-valley ratio of 1.6 at RT. Dislocation-free material is shown to be the key for the performance of GaN RTDs. 

Similar Papers

Figures from this paper.

Citations

Publications citing this paper.
SHOWING 1-10 OF 13 CITATIONS

Esaki Diodes Based on 2-D/3-D Heterojunctions

  • IEEE Transactions on Electron Devices
  • 2018
VIEW 2 EXCERPTS
CITES BACKGROUND

References

Publications referenced by this paper.

Péré - Laperne , and M . Razeghi

N. Bayram
  • Appl . Phys . Lett .