AlInN/GaN a suitable HEMT device for extremely high power high frequency applications

@article{Gaquire2007AlInNGaNAS,
  title={AlInN/GaN a suitable HEMT device for extremely high power high frequency applications},
  author={Christophe Gaqui{\`e}re and F. Medjdoub and J J Carlin and S. Vandenbrouck and E. Delos and Eric Feltin and Nicolas Grandjean and Erhard Kohn},
  journal={2007 IEEE/MTT-S International Microwave Symposium},
  year={2007},
  pages={2145-2148}
}
AlInN/GaN unpassivated high electron mobility transistor (HEMT) on sapphire substrate has yielded a maximum drain current density close to 2 A/mm in steady state. Superior gate length downscaling than AlGaN/GaN devices has been observed owing to the possibility of the use of ultra thin barrier layer while keeping extremely high sheet carrier density. We reached an extrinsic current gain cut-off frequency of 70 GHz for a 0.08 mum gate length device. Large signal measurements reveal a relatively… CONTINUE READING