AlInGaN/GaN heterostructures with 2D electron gas and quantum wells for transistors and light emitting diodes

Abstract

AlInGaN/GaN heterostructures with 2D electron gas and quantum wells were grown on Si substrates. Optical and electrical properties of the heterostructure were investigated; high electron mobility transistors (HEMT) and light emitting diodes (LED) were fabricated. 

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