AlGaSb/GaSb metal-semiconductor-metal detectors grown on InP substrates

@inproceedings{Wang1992AlGaSbGaSbMD,
  title={AlGaSb/GaSb metal-semiconductor-metal detectors grown on InP substrates},
  author={Yuqi Wang and Malvin Carl Teich and Wen I. Wang},
  booktitle={Other Conferences},
  year={1992}
}
Al0.5Ga0.5Sb/GaSb metal-semiconductor-metal (MSM) detectors have been prepared on semi-insulating InP substrates. The molecular beam epitaxially grown samples on differently orientated substrates exhibit different types of conductivity. The Schottky barrier height between Al and Al0.5Ga0.5Sb grown on (311)B oriented substrates is 0.6 eV, while the Al contacts on (100) sample exhibit ohmic behavior. The results show that the Sb- deficiency related p-type native defect density is significantly… 
1 Citations
Growth of InP directly on Si by corrugated epitaxial lateral overgrowth
In an attempt to achieve an InP-Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An

References

SHOWING 1-10 OF 12 REFERENCES
IEEE Electron Device Lett
  • IEEE Electron Device Lett
  • 1990
IEEE Electron Device Lett
  • IEEE Electron Device Lett
  • 1990
Proc. LEOS' 90
  • Proc. LEOS' 90
  • 1990
in Proc
  • LEOS' 90, Nov.
  • 1990
Appi. Phys. Lett
  • Appi. Phys. Lett
  • 1989
IEEE Photon. Technol. Lett
  • IEEE Photon. Technol. Lett
  • 1989
Technol
  • Lett., 1,250,
  • 1989
Phys. Lett
  • Phys. Lett
  • 1973
1813 Optoelectronic Component Technologies
  • 1813 Optoelectronic Component Technologies
  • 1964
Phys
  • Rev. 134, A713,
  • 1964
...
1
2
...