AlGaN ultraviolet photoconductors grown on sapphire

@inproceedings{Walker1996AlGaNUP,
  title={AlGaN ultraviolet photoconductors grown on sapphire},
  author={Danielle Walker and Xiao-bing Zhang and Patrick Kung and Adam William Saxler and Sirus Javadpour and Jiadong Xu and Manijeh Razeghi},
  year={1996}
}
AlxGa1−xN (0≤x≤0.50) ultraviolet photoconductors with a minimum cutoff wavelength shorter than 260 nm have been fabricated and characterized. The AlGaN active layers were grown on (00⋅1) sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature. The carrier lifetime derived from the voltage‐dependent responsivity is 0.13–0.36 ms. 

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