AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with TiO<inf>2</inf> gate dielectrics

Abstract

Summary form only given. AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs), using TiO<sub>2</sub> as gate dielectric, are proposed. The dielectric constant of the TiO<sub>2</sub> gate-dielectric layer extracted from C-V measurement is about 20.57. This AlGaN/GaN MOS-HEMT design exhibits enhanced device performances. As… (More)

Cite this paper

@article{Lin2016AlGaNGaNMH, title={AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with TiO2 gate dielectrics}, author={Yu-Shyan Lin and Chi-Che Lu}, journal={2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)}, year={2016}, pages={1-1} }