AlGaN/GaN-on-Silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process

Abstract

AlGaN/GaN MOS-HEMTs on a silicon platform were realized using a CMOS-compatible gold-free process. Process modules commonly used in CMOS were used, including gate stack formation, etching modules, etc. R<sub>on</sub> of 3 mΩ.cm<sup>2</sup> was obtained. Breakdown voltage V<sub>BR</sub> of 800 V was achieved, the highest for L<sub>GD</sub> below 10 μm for… (More)

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