AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates

@article{Witte2013AlGaNGaNHF,
  title={AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates},
  author={W. Witte and B. Reuters and D. Fahle and H. Behmenburg and K. Wang and A. Trampert and B. Holl{\"a}nder and H. Hahn and H. Kalisch and M. Heuken and A. Vescan},
  journal={Semiconductor Science and Technology},
  year={2013},
  volume={28},
  pages={085006}
}
We demonstrate the application of nitrogen (N) implantation in GaN as a current-blocking layer. In a first step, vertical current-blocking behavior was confirmed by processing quasi-vertical Schottky diodes with full-area N-implantation. The leakage current was only 10−6 A cm−2 in forward and reverse directions. Also, the regrowth of AlGaN/GaN heterostructure field-effect transistors on N-implanted and, for reference, non-implanted GaN templates is demonstrated. Even though a decrease in the… Expand
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