AlGaN/GaN current aperture vertical electron transistors

@article{BenYaacov2002AlGaNGaNCA,
  title={AlGaN/GaN current aperture vertical electron transistors},
  author={Ilan Ben-Yaacov and Y.-K. Seck and S. Heikman and S. P. Denbaars and U. K. Mishra},
  journal={60th DRC. Conference Digest Device Research Conference},
  year={2002},
  pages={31-32}
}
Describes AlGaN/GaN current aperture vertical electron transistor (CAVET) structures. A CAVET consists of a source region separated from a drain region by an insulating layer containing a narrow aperture which is filled with conducting material. A device mesa is formed by reactive ion etching, and source contacts are deposited on either side of the aperture. The drain metal contacts the n-doped region below the aperture. Electrons flow from the source contacts through the aperture into the n… CONTINUE READING
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