AlGaN/GaN current aperture vertical electron transistors

  title={AlGaN/GaN current aperture vertical electron transistors},
  author={Ilan Ben-Yaacov and Y.-K. Seck and S. Heikman and S. P. Denbaars and U. K. Mishra},
  journal={60th DRC. Conference Digest Device Research Conference},
Describes AlGaN/GaN current aperture vertical electron transistor (CAVET) structures. A CAVET consists of a source region separated from a drain region by an insulating layer containing a narrow aperture which is filled with conducting material. A device mesa is formed by reactive ion etching, and source contacts are deposited on either side of the aperture. The drain metal contacts the n-doped region below the aperture. Electrons flow from the source contacts through the aperture into the n… CONTINUE READING
Highly Cited
This paper has 29 citations. REVIEW CITATIONS
16 Citations
8 References
Similar Papers


Publications citing this paper.
Showing 1-10 of 16 extracted citations


Publications referenced by this paper.
Showing 1-8 of 8 references


  • H. Xing, D. S. Green, H. Yu, T. Mates, P. Kozodoy, S.P.S. Keller
  • Jpn. J. Appl. Phys.,
  • 2003
Highly Influential
20 Excerpts

A Method of Measuring the Resistivity and Hall Coefficient on Lamellae of Arbitrary Shape

  • L. J. van der Pauw
  • Phillips Tech. Rev.,
  • 1958
Highly Influential
15 Excerpts

Kilovolt AlGaN/GaN HEMTs as switching devices

  • N. Zhang, B. Morgan, S. P. DenBaars, U. K. Mishra, X. W. Wang, T. P. Ma
  • Phys. Status Solidi A,
  • 2001
Highly Influential
4 Excerpts

Excited states of Fe3+ in GaN

  • R. Heitz, P. Maxim, +5 authors B. K. Meyer
  • Phys. Rev. B,
  • 1997
Highly Influential
5 Excerpts

Electrical Transport Properties of p-GaN

  • H. Nakayama, P. Hacke, M.R.H. Khan, T. Detchprohm, K. Hiramatsu, N. Sawaki
  • Jpn. J. Appl. Phys., Part 2,
  • 1996
Highly Influential
5 Excerpts

Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers

  • J. Baur, K. Maier, +6 authors K. Hiramatsu
  • Appl. Phys. Lett.,
  • 1994
Highly Influential
5 Excerpts

Growth and characteristics of Fe-doped GaN

  • S. Heikman, S. Keller, T. Mates, S. P. DenBaars, U. K. Mishra
  • J. Cryst. Growth,
  • 2003
6 Excerpts

Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN

  • S. Heikman, S. Keller, B. Moran, R. Coffie, S. P. DenBaars, U. K. Mishra
  • Phys. Status Solidi A,
  • 2001
4 Excerpts

Similar Papers

Loading similar papers…