AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

@article{Kuball2011AlGaNGaNHD,
  title={AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes},
  author={Martin Kuball and Milan Tapajna and Richard J. T. Simms and Mustapha Faqir and Umesh K. Mishra},
  journal={Microelectronics Reliability},
  year={2011},
  volume={51},
  pages={195-200}
}
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