AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

@article{BahatTreidel2010AlGaNGaNAlGaNDB,
  title={AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)},
  author={Eldad Bahat-Treidel and Oliver Hilt and Frank Brunner and Victor Sidorov and Joachim Wux0308rfl and Gux0308nther Trax0308nkle},
  journal={IEEE Transactions on Electron Devices},
  year={2010},
  volume={57},
  pages={1208-1216}
}
GaN-based high-electron mobility transistors with planar multiple grating field plates (MGFPs) for high-voltage operation are described. A synergy effect with additional electron channel confinement by using a heterojunction AlGaN back barrier (BB) is demonstrated. Suppression of the OFF-state subthreshold gate and drain leakage currents enables breakdown voltage enhancement over 700 V and a low ON-state resistance of 0.68 mΩ × cm2. Such devices have a minor tradeoff in ON-state resistance, lag… CONTINUE READING
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