AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

@inproceedings{Wang2007AlGaNAlNGaNSiCHS,
  title={AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD},
  author={Xiaoliang Wang and Guoxin Hu and Zhiyong Ma and Junxue Ran and Cuimei Wang and Hongling Xiao and Jian Tang and Jianping Li and Junxi Wang and Yiping Zeng and Jinmin Li and Zhanguo Wang},
  year={2007}
}
Enhancement of the electrical properties in an AlGaN/GaN high electron mobility transistor (HEMT) structures was demonstrated by employing the combination of a high mobility GaN channel layer and an AlN interlayer. The structures were grown on 50 mm semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition (MOCVD). The room temperature (RT) two-dimensional electron gas (2DEG) mobility was as high as 2215 cm(2)/V s, with a 2DEG concentration of 1.044 x 10(13)cm(-2). The 50… CONTINUE READING

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