Al / Ti contacts to Sb-doped p-type ZnO

@inproceedings{Mandalapu2007AlT,
  title={Al / Ti contacts to Sb-doped p-type ZnO},
  author={L. J. Mandalapu and Faxian Xiu and Zheng Yang and J. L. Liua},
  year={2007}
}
  • L. J. Mandalapu, Faxian Xiu, +1 author J. L. Liua
  • Published 2007
Sb-doped p-type ZnO film was grown on Si 100 substrate by molecular-beam epitaxy. Al/Ti metal was evaporated on the ZnO film to form contacts. As-deposited contacts were Schottky with a barrier height of 0.8 eV. Ohmic conduction was achieved after thermal annealing. The different combinations of Ohmic and Schottky contacts on Sb-doped ZnO layer led to metal-semiconductor-metal MSM , Schottky, and photoconductive devices. Ohmic contacts on Sb-doped p-type ZnO and backside of n-type Si substrate… CONTINUE READING