Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities† †Electronic supplementary information (ESI) available: Details of the syntheses, film-preparation procedure, structural characterization data and additional physical characterization data. See DOI: 10.1039/c4sc03492a Click here for additional data file.

@inproceedings{Kong2015AirstableAF,
  title={Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities†
†Electronic supplementary information (ESI) available: Details of the syntheses, film-preparation procedure, structural characterization data and additional physical characterization data. See DOI: 10.1039/c4sc03492a
Click here for additional data file.

},
  author={Xia Kong and Xia Zhang and Dameng Gao and Dongdong Qi and Yanli Chen and Jianzhuang Jiang},
  year={2015}
}
Shandong Provincial Key Laboratory of Flu School of Chemistry and Chemical Enginee China. E-mail: chm_chenyl@ujn.edu.cn; Fax Beijing Key Laboratory for Science and A Crystalline Materials, Department of C Technology Beijing, Beijing 100083, China +86 0010 6233 2462 † Electronic supplementary information ( lm-preparation procedure, structural physical… CONTINUE READING