Air-gap structure between integrated LiNbO3 optical modulators and micromachined Si substrates.

Abstract

The air-gap structure between integrated LiNbO(3) optical modulators and micromachined Si substrates is reported for high-speed optoelectronic systems. The calculated and experimental results show that the high permittivity of the Si substrate decreases the resonant modulation frequency to 10 GHz LiNbO(3) resonant-type optical modulator chips on the Si… (More)
DOI: 10.1364/OE.19.015739

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