Aging mitigation in memory arrays using self-controlled bit-flipping technique

@article{Gebregiorgis2015AgingMI,
  title={Aging mitigation in memory arrays using self-controlled bit-flipping technique},
  author={Anteneh Gebregiorgis and Mojtaba Ebrahimi and Saman Kiamehr and Fabian Oboril and Said Hamdioui and Mehdi Baradaran Tahoori},
  journal={The 20th Asia and South Pacific Design Automation Conference},
  year={2015},
  pages={231-236}
}
With CMOS technology downscaling into the nanometer regime, the reliability of SRAM memories is threatened by accelerated transistor aging mechanisms such as Bias Temperature Instability (BTI). BTI leads to a considerable degradation of SRAM cell Static Noise Margin (SNM), which increases the memory failure rate. Since BTI is workload dependent, the aging rates of different cells in a memory array are quite non-uniform. To address this issue, a variety of bit-flipping techniques has been… CONTINUE READING