Advances in quantum dot intermediate band solar cells

@article{Antoln2010AdvancesIQ,
  title={Advances in quantum dot intermediate band solar cells},
  author={Elisa Antol{\'i}n and Antonio Barba Mart{\'i} and Pablo G. Linares and I. Ramiro and Eduardo R. Hern{\'a}ndez and CD. Farmer and Clifford R. Stanley and Antonio L. Luque},
  journal={2010 35th IEEE Photovoltaic Specialists Conference},
  year={2010},
  pages={000065-000070}
}
Several groups have reported on intermediate band solar cells (IBSC) fabricated with InAs/GaAs quantum dots (QD) which exhibit quantum efficiencies (QE) for sub-bandgap photon energies. However, this QE is produced by the absorption of photons only through valence band (VB) to intermediate band (IB) transitions. The absorption of photons of that energy in IB to conduction band (CB) transitions is weak and is usually replaced by carrier escape. This mechanism is incompatible with the… CONTINUE READING
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