Advances in CPL, collimated plasma source and full field exposure for sub-100-nm lithography

@inproceedings{Boerger2003AdvancesIC,
  title={Advances in CPL, collimated plasma source and full field exposure for sub-100-nm lithography},
  author={Brent Edward Boerger and Scott McLeod and Richard A. Forber and I. C. Edmond Turcu and Celestino John Gaeta and Donald K. Bailey and Jacob Ben-Jacob},
  booktitle={SPIE Advanced Lithography},
  year={2003}
}
In the world of microLithography, several options exist for obtaining features below the 100nm level. Options include a variety of methods which range from additional process steps in etch, multilayer resist systems, or expensive throughput limited direct write E-beam systems. Each comes with a handful of trade offs in uniformity, repeatability and cost. Collimated (LASER) Plasma Lithography (CPL), on the other hand offers a full field exposure with minimal process intervention to obtain… CONTINUE READING
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