Advanced thermally stable silicide S/D electrodes for high-speed logic circuits with large-scale embedded Ta/sub 2/O/sub 5/-capacitor DRAMs

Abstract

A process that enables good gate-oxide integrity (GOI) in W/barrier/poly-Si gates and thermally stable low-resistivity source/drain (S/D) CoSi/sub 2/ electrodes has been developed for high-speed logic circuits with large-scale embedded DRAMs that use Ta/sub 2/O/sub 5/ high-k capacitors for high-density memory cells. Spin-on-glass (SOG)-based films were used… (More)

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Cite this paper

@article{Saito1999AdvancedTS, title={Advanced thermally stable silicide S/D electrodes for high-speed logic circuits with large-scale embedded Ta/sub 2/O/sub 5/-capacitor DRAMs}, author={M. Saito and M. Yoshida and Kota Asaka and H. Goto and Naohisa Fukuda and Makoto Kawano and M. Kojima and M. Suzuki and K. Ogaya and Hiroaki Enomoto and K. Hotta and Shigeki Sakai and Hitoshi Asakura and Toshio Fukuda and T. Sekiguchi and Tokuo Takakura and N. Kobayashi}, journal={International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)}, year={1999}, pages={805-808} }