Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing.


We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

DOI: 10.1063/1.4926995

Cite this paper

@article{Kaganskiy2015AdvancedIE, title={Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing.}, author={Arsenty Kaganskiy and Manuel Gschrey and Alexander Schlehahn and Ronny Schmidt and Jan-Hindrik Schulze and Tobias Heindel and Andr{\'e} Strittmatter and Sven Rodt and Stephan Reitzenstein}, journal={The Review of scientific instruments}, year={2015}, volume={86 7}, pages={073903} }