Advanced high-k dielectric stacks with polySi and metal gates: Recent progress and current challenges

@article{Gusev2006AdvancedHD,
  title={Advanced high-k dielectric stacks with polySi and metal gates: Recent progress and current challenges},
  author={Evgeni P. Gusev and Vijaykrishnan Narayanan and Martin M. Frank},
  journal={IBM Journal of Research and Development},
  year={2006},
  volume={50},
  pages={387-410}
}
The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-j dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-j dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characterization, processing, and integration issues are discussed. 

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