Advanced Poly-Si NMIS and Poly-Si/TiN PMIS Hybrid-Gate High-k CMIS using PVD/CVD-Stacked TiN and Local Strain Technique

@article{Nishida2007AdvancedPN,
  title={Advanced Poly-Si NMIS and Poly-Si/TiN PMIS Hybrid-Gate High-k CMIS using PVD/CVD-Stacked TiN and Local Strain Technique},
  author={Yoko Nishida and Takayda Kawahara and Sachinori Sakashita and Masayoshi Mizutani and S. Yamanari and Mitsutoshi Higashi and Naofumi Murata and Makoto Inoue and Jiro Yugami and Suzunori Endo and Toshimitsu Hayashi and Tomohiro Yamashita and Hiroshi Oda and Yoshio Inoue},
  journal={2007 IEEE Symposium on VLSI Technology},
  year={2007},
  pages={214-215}
}
Performance of advanced hybrid-gate CMOS (poly-Si/HfSiON nMIS and poly-Si/TiN/HfSiON pMIS) is demonstrated. Vth of pMIS is controlled by fluorine implantation and by PVD/CVD-stacked TiN, which has higher WF than conventional single-CVD TiN. This combination enables sufficient Vth-control without degradation of device characteristics by excessive fluorine. Performance boosters such as strain enhancement techniques and laser annealing are easily and successfully introduced, and high current… CONTINUE READING