Advanced Dual Metal Gate MOSFETs with High-k Dielectric for CMOS Application

Abstract

This paper reports the fabrication of MOSFETs with dual metal gate electrodes. Low threshold voltage (Vt) was achieved using TaC for nFETs and MoNx for pFETs. The transistors show excellent Ion-Ioff performance with well-controlled short channel effects. Benefited from a novel approach in base oxide formation, high mobility at ~90% of poly/SiO2 was achieved… (More)

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