Advanced Dicing Technology for Semiconductor Wafer—Stealth Dicing

@article{Kumagai2007AdvancedDT,
  title={Advanced Dicing Technology for Semiconductor Wafer—Stealth Dicing},
  author={M. Kumagai and N. Uchiyama and E. Ohmura and R. Sugiura and K. Atsumi and K. Fukumitsu},
  journal={IEEE Transactions on Semiconductor Manufacturing},
  year={2007},
  volume={20},
  pages={259-265}
}
ldquoStealth dicing (SD)rdquo was developed to solve inherent problems of a dicing process such as debris contaminants and unnecessary thermal damages on a work wafer. A completely dry process is another big advantage over other dicing methods. In SD, the laser beam power of transmissible wavelength is absorbed only around focal point in the wafer by utilizing the temperature dependence of the absorption coefficient of the wafer. The absorbed power forms a modified layer in the wafer, which… Expand
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  • 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)
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References

SHOWING 1-10 OF 13 REFERENCES
Analysis of modified layer formation into silicon wafer by permeable nanosecond laser
When a permeable nanosecond pulse laser which is focused into the inside of a silicon wafer is scanned in the horizontal direction, a belt-shaped high dislocation density layer including partiallyExpand
Internal modified-layer formation mechanism into silicon with nanosecond laser
Purpose: When a permeable nanosecond pulse laser which is condensed into the inside of a silicon wafer is scanned in the horizontal direction, a belt-shaped polycrystal layer is formed at anExpand
Laser separation of flat glass in electronic-, optic-, display-, and bio-industry (Invited Paper)
Up until now, conventional cutting methods by using metal or diamond wheels have been widely in use in numerous glass industries. Along with the market trend towards clean and more sophisticatedExpand
Temperature dependence of the optical properties of silicon
The spectral dependence of the absorption coefficient of silicon for photon energies up to 2.7 eV was determined for several temperatures in the range 298–473 K. The effect of a temperature increaseExpand
ALSI’s low power multiple beam technology for high throughput and low damage wafer dicing,
  • in Proc. 65th Laser Materials Processing Conf.,
  • 2006
Dicing of wafers by patented waterjetguided laser : The total damagefree cut
  • Proc . 65 th Laser Materials Processing Conf .
  • 2006
The mechanism of semiconductor wafer dicing by stealth dicing technology
  • Proc . 4 th Int . Congr . Laser Advanced Materials Processing
  • 2006
and H
  • Morita, “Analysis of modified layer formation into silicon wafer by permeable nanosecond laser,” in Proc. Int. Congr. Applications Lasers and Electro-Optics
  • 2006
and N
  • Uchiyama, “The mechanism of semiconductor wafer dicing by stealth dicing technology,” in Proc. 4th Int. Congr. Laser Advanced Materials Processing
  • 2006
and Y
  • Kozuki, “Dicing of wafers by patented water-jet-guided laser: The total damage-free cut,” in Proc. 65th Laser Materials Processing Conf.
  • 2006
...
1
2
...