Advanced 2D latch-up device simulation-a powerful tool during development in the pre-silicon phase

@article{BargstadtFranke2001Advanced2L,
  title={Advanced 2D latch-up device simulation-a powerful tool during development in the pre-silicon phase},
  author={S. Bargstadt-Franke and Karl Oettinger},
  journal={2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)},
  year={2001},
  pages={235-239}
}
The consideration of parasitic effects like the ESD and latch-up sensitivity of a new technology in the early development phase is not yet established. Calibrated 2D simulation can be used for optimizing the technology according to these parasitic effects yielding to an area optimized protection concept and thus offering the possibility to reduce chip costs. In this paper, we present a 2D latch-up device simulation developed for use in the pre-silicon phase to get an optimized pre-silicon latch… CONTINUE READING

Citations

Publications citing this paper.
SHOWING 1-5 OF 5 CITATIONS

External Latchup Characteristics Under Static and Transient Conditions in Advanced Bulk CMOS Technologies

  • 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual
  • 2007
VIEW 2 EXCERPTS
CITES BACKGROUND

Investigation of External Latchup Robustness of Dual and Triple Well Designs in 65nm Bulk CMOS Technology

  • 2006 IEEE International Reliability Physics Symposium Proceedings
  • 2006
VIEW 3 EXCERPTS
CITES BACKGROUND

Latch-up in 65nm CMOS technology: a scaling perspective

  • 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.
  • 2005

Transient latch-up: Experimental analysis and device simulation

  • 2003 Electrical Overstress/Electrostatic Discharge Symposium
  • 2003
VIEW 1 EXCERPT
CITES BACKGROUND

References

Publications referenced by this paper.
SHOWING 1-3 OF 3 REFERENCES

Adamcik, TCAD-a progressive tool for engineers, Radioengineering

J. Vobecky, J. Voves, P. Hazdra
  • 1993

The use of simulation in semiconductor technology development, Sol

D. C. Col E.M. Buturla
  • Stat. Electr
  • 1990