Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors

@article{Idir2006ActiveGV,
  title={Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors},
  author={Nadir Idir and Robert Bausiere and Jean Jacques Franchaud},
  journal={IEEE Transactions on Power Electronics},
  year={2006},
  volume={21},
  pages={849-855}
}
As the characteristics of insulted gate transistors [like metal–oxide–semiconductor field-effect transistors and insulated gate bipolar transistors (IGBTs)] have been constantly improving, their utilization in power converters operating at higher and higher frequencies has become more common. However, this, in turn, leads to fast current and voltage transitions that generate large amounts of electromagnetic interferences over wide frequency ranges. In this paper, a new active gate voltage… CONTINUE READING
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