Active Gate Control for Current Balancing of Parallel-Connected IGBT Modules in Solid-State Modulators

@article{Bortis2007ActiveGC,
  title={Active Gate Control for Current Balancing of Parallel-Connected IGBT Modules in Solid-State Modulators},
  author={Dominik Bortis and Juergen Biela and J. W. Kolar},
  journal={IEEE Transactions on Plasma Science},
  year={2007},
  volume={36},
  pages={2632-2637}
}
  • Dominik Bortis, Juergen Biela, J. W. Kolar
  • Published in
    IEEE Transactions on Plasma…
    2007
  • Engineering
  • In modern pulsed power systems, often, fast solid-state switches like MOSFETs and insulated gate bipolar transistor (IGBT) modules are used to generate short high power pulses. In order to increase the pulsed power, solid-state switches have to be connected in series or in parallel. Depending on the interconnection of the switches, parameter variations in the switches and in the system can lead to an unbalanced voltage or current. Therefore, the switches are generally derated, which results in… CONTINUE READING

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