Active Current Balancing for Parallel-Connected Silicon Carbide MOSFETs

Abstract

In high power applications of silicon carbide (SiC) MOSFETs where parallelism is employed, current unbalance can occur and affect the performance and reliability of the power devices. In this paper, factors which cause current unbalance in these devices are analyzed. Among them, the threshold voltage mismatch is identified as a major factor for dynamic current unbalance. The threshold distribution of SiC MOSFETs is investigated, and its effect on current balance is studied in experiments. Based on these analyses, an active current balancing scheme is proposed. It is able to sense the unbalanced current and eliminate it by actively controlling the gate drive signal to each device. The features of fine time resolution and low complexity make this scheme attractive to a wide variety of wide-band-gap device applications. Experimental and simulation results verify the feasibility and effectiveness of the proposed scheme.

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Cite this paper

@inproceedings{Xue2013ActiveCB, title={Active Current Balancing for Parallel-Connected Silicon Carbide MOSFETs}, author={Yang Xue and Junjie Lu and Zhiqiang Wang and Leon M. Tolbert and Benjamin J. Blalock and Fred Wang}, year={2013} }