Activation of silicon wafer by excimer laser

@article{Paetzel2010ActivationOS,
  title={Activation of silicon wafer by excimer laser},
  author={Rainer Paetzel and Jan Brune and Frank Simon and Ludolf Herbst and Masashi Machida and Junichi Shida},
  journal={2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP)},
  year={2010},
  pages={98-102}
}
The application of lasers for annealing wafer-based and thin-film microelectronic devices is steadily increasing. Excellent control of material characteristics such as the dopant activation profile are achieved through proper selection of the laser parameters which directly influence the laser material interaction; these include wavelength, pulse duration… CONTINUE READING