Achieving Stable Through-Silicon Via (TSV) Capacitance with Oxide Fixed Charge

@article{Zhang2011AchievingST,
  title={Achieving Stable Through-Silicon Via (TSV) Capacitance with Oxide Fixed Charge},
  author={Lu Zhang and H. Y. Li and Shan Gao and C. S. Tan},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={668-670}
}
Through-silicon via (TSV) is an important enabler for future 3-D integration of integrated circuits. TSV typically contains a high-aspect-ratio metal via embedded in silicon and electrically isolated from the silicon by a layer of dielectric liner hence forming a metal-oxide-semiconductor structure. The parasitic capacitance introduced by TSV must be kept as low as possible for low latency signal transmission. It is also equally important to ensure that the capacitance within the operating… CONTINUE READING
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