Achieving Stable Through-Silicon Via (TSV) Capacitance with Oxide Fixed Charge

  title={Achieving Stable Through-Silicon Via (TSV) Capacitance with Oxide Fixed Charge},
  author={Lu Zhang and H. Y. Li and Shan Gao and C. S. Tan},
  journal={IEEE Electron Device Letters},
Through-silicon via (TSV) is an important enabler for future 3-D integration of integrated circuits. TSV typically contains a high-aspect-ratio metal via embedded in silicon and electrically isolated from the silicon by a layer of dielectric liner hence forming a metal-oxide-semiconductor structure. The parasitic capacitance introduced by TSV must be kept as low as possible for low latency signal transmission. It is also equally important to ensure that the capacitance within the operating… CONTINUE READING
Highly Cited
This paper has 37 citations. REVIEW CITATIONS
25 Citations
14 References
Similar Papers


Publications citing this paper.
Showing 1-10 of 25 extracted citations


Publications referenced by this paper.
Showing 1-10 of 14 references

Hierarchical Cache System for 3D-Multi-Core Processors in sub 90 nm CMOS

  • K. Nomura, K. Abe, S. Fujita, Y. Kurosawa, A. Kageshima
  • Proc. Des. Autom. Test Eur., Nice, France, Apr…
  • 2009
1 Excerpt

Net negative charge in low-temperature SiO2 gate dielectric layers

  • A. Boogaard, A. Y. Kovalgin, R.A.M. Wolters
  • Microelectron. Eng., vol. 86, no. 7–9, pp. 1707…
  • 2009
1 Excerpt

Wafer Level 3-D ICs Process Technology

  • C. S. Tan, R. J. Guttmann, R. Reif
  • New York: Springer-Verlag,
  • 2008
1 Excerpt

Similar Papers

Loading similar papers…