Accurate characterization of electron and hole inversion-layer capacitance and its impact on low voltage operation of scaled MOSFETs

@article{Takagi1998AccurateCO,
  title={Accurate characterization of electron and hole inversion-layer capacitance and its impact on low voltage operation of scaled MOSFETs},
  author={Shin-ichi Takagi and M. Takayanagi-Takagi and Akira Toriumi},
  journal={International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)},
  year={1998},
  pages={619-622}
}
The influence of inversion-layer capacitance (C/sub inv/) on supply voltage (V/sub dd/) of n- and p-MOSFETs is quantitatively examined. Hole C/sub inv/ is experimentally evaluated in addition to electron C/sub inv/. It is found that the degradation of gate capacitance for holes due to C/sub inv/, is more severe than that for electrons. Self-consistent calculation under a simple valence band model represents the experimental hole C/sub inv/, quite well. It is demonstrated that additional band… CONTINUE READING