Accurate Defect Density-of-State Extraction Based on Back-Channel Surface Potential Measurement for Solution-Processed Metal-Oxide Thin-Film Transistors

Abstract

We report more accurate extraction method of the defect density of states for solution-processed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Since the solution-processed IGZO TFTs have a very thin (~8 nm) active semiconductor layer, their back-channel surface potential should be considered in the field-effect method. If the back-channel… (More)

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