Accurate 3‐D capacitance extractions for advanced nanometer CMOS nodes

Abstract

During the R&D of advanced nanometer CMOS technologies such as 20nm and beyond, we implemented in-house 3-D capacitance extraction software to provide R&D engineers with an accurate modeling tool to optimize the complex 3-D nanometer dimensions and materials that may be used for competitive CMOS devices in terms of power consumption, performance, and area… (More)
DOI: 10.1109/VLSI-DAT.2015.7114565

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