Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

@article{Sasikumar2012AccessRegionDS,
  title={Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs},
  author={Archana Sasikumar and Aaron R. Arehart and Seshadri K. Kolluri and Man Hoi Wong and Sarah L. Keller and Steven P. Denbaars and James S. Speck and Us. Mishra and Steven A. Ringel},
  journal={IEEE Electron Device Letters},
  year={2012},
  volume={33},
  pages={658-660}
}
Distinct trap levels in the drain access regions of an N-polar GaN MIS-HEMT are investigated before and after semi-on dc stressing by thermal and optical trap spectroscopies. The most prominent dc stress effect was an increase in concentration of a pre-existing electron trap with an activation energy of 0.54 eV, accompanied by a decrease in concentration of an electron trap with a 0.65-eV activation energy. These distinct states had similar concentrations before stressing, with the 0.54-eV trap… CONTINUE READING

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