Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology

Abstract

This work is focused on the accelerated testing of Flash memory reliability, taking our 45 nm NOR technology as a case study to highlight some major issues that may affect the investigation of modern nanoscale devices. In particular, results will be shown on cycling-induced threshold-voltage instabilities coming from charge trapping/detrapping in the cell… (More)
DOI: 10.1109/ICICDT.2013.6563298

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