Accelerated life test results of InGaAs/InP heterojunction bipolar transistors

  • R. Lee
  • Published 2003 in
    25th Annual Technical Digest 2003. IEEE Gallium…
In this paper, we report the accelerated life test results of Vitesse InGaAs/InP heterojunction bipolar junction transistors (HBT). This HBT process is designed for Ft and Fmax over 150 GHz and has produced InP integrated circuits with 5000 transistors at 40 GHz clock rate. The tests were carried out at junction temperatures of 165/spl deg/C, 185/spl deg/C… (More)