Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy.

@article{Sinito2019AbsenceOQ,
  title={Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy.},
  author={C. Sinito and P. Corfdir and C. Pf{\"u}ller and G. Gao and Javier Bartolom{\'e} V{\'i}lchez and S. Koelling and Alfonso Rodil Doblado and U. Jahn and J. L{\"a}hnemann and T. Auzelle and J. K. Zettler and T. Flissikowski and P. Koenraad and H. Grahn and L. Geelhaar and S. Fern{\'a}ndez-Garrido and O. Brandt},
  journal={Nano letters},
  year={2019}
}
  • C. Sinito, P. Corfdir, +14 authors O. Brandt
  • Published 2019
  • Materials Science, Medicine, Physics
  • Nano letters
    • Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN quantum disks embedded in long (Al,Ga)N nanowire segments essential for efficient light extraction… CONTINUE READING
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