Abruptp- type doping transitions using bis-(cyclopentadienyl)-magnesium in metal-organic vapor phase epitaxy of GaAs

@article{Rask1988AbruptpTD,
  title={Abruptp- type doping transitions using bis-(cyclopentadienyl)-magnesium in metal-organic vapor phase epitaxy of GaAs},
  author={Michael Rask and Gunnar Landgren and Sven G. Andersson and A. Lundberg},
  journal={Journal of Electronic Materials},
  year={1988},
  volume={17},
  pages={311-314}
}
Extremely abrupt p+-n doping transitions have been realized in GaAs and AlGaAs grown by metal-organic vapor phase epitaxy using bis-(cyclopentadienyl)-magnesium (Cp2Mg) as precursor for the Mg p-dopant. The Mg incorporation was found to depend linearly on the Cp2Mg concentration, in contrast to reports of a supralinear behaviour. Methods for eliminating reactor memory effects are described. Layers doped to about 1 x 1019 cm-3 and as thin as 100 nm at 10% of the peak doping have been grown under… Expand
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