Ab-initio calculation of band alignments for opto-electronic simulations

@article{Oelerich2019AbinitioCO,
  title={Ab-initio calculation of band alignments for opto-electronic simulations},
  author={Jan Oliver Oelerich and Maria J. Weseloh and Kerstin Volz and Stephan W. Koch},
  journal={AIP Advances},
  year={2019}
}
A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offsets and the resulting bandstructure are used as input for the microscopic calculation of photoluminescence spectra yielding very good agreement with recent experimental results. 
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