Ab-initio Calculations for Indium Diffusion in Silicon

@article{Kwansun2005AbinitioCF,
  title={Ab-initio Calculations for Indium Diffusion in Silicon},
  author={Kwan-sun and Chi-Ok Hwang and Taeyoung Won},
  journal={2005 International Semiconductor Device Research Symposium},
  year={2005},
  pages={422-423}
}
As CMOS devices are scaled down to nanometer regime, it is even more stringent to control the impurity profiles at the front-end process. Especially, ion implantation for ultra shallow junction in nano-CMOS technology requires a new alternative material considering low diffusivity coefficient, activation energy and implant statistics. Recently, indium has been employed in the fabrication of retrograde p-tub and halo region for nchannel in CMOS. In this work, we investigated the atomic-scale… CONTINUE READING

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