AOS: Adaptive overwrite scheme for energy-efficient MLC STT-RAM cache


Spin-Transfer Torque Random Access Memory (STT-RAM) has been identified as an advantageous candidate for on-chip memory technology due to its high density and ultra low leakage power. Recent research progress in Magnetic Tunneling Junction (MTJ) devices has developed Multi-Level Cell (MLC) STT-RAM to further enhance cell density. To avoid the write… (More)
DOI: 10.1145/2897937.2897987


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Citations per Year

Citation Velocity: 40

Averaging 40 citations per year over the last 2 years.

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