AN 8.7 GHZ GAN MICROMECHNAICAL RESONATOR WITH AN INTEGRATED ALGAN/GAN HEMT

@inproceedings{Ansari2014AN8G,
  title={AN 8.7 GHZ GAN MICROMECHNAICAL RESONATOR WITH AN INTEGRATED ALGAN/GAN HEMT},
  author={Azadeh Ansari and Mina Rais-Zadeh},
  year={2014}
}
A thickness-mode GaN resonator is presented in this work, showing fourth-order thickness-mode resonance at 8.7 GHz with an extracted quality factor (Q) of 330, exhibiting the highest resonance frequency measured to date on GaN micromechanical resonators with a high frequency × Q value of 2.87 × 10 12 . With the goal of implementing an all-GaN multi-GHz oscillator, the resonator is monolithically integrated with an AlGaN/GaN high electron mobility transistor (HEMT). The results reported in this… Expand

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