author={Azadeh Ansari and Mina Rais-Zadeh},
A thickness-mode GaN resonator is presented in this work, showing fourth-order thickness-mode resonance at 8.7 GHz with an extracted quality factor (Q) of 330, exhibiting the highest resonance frequency measured to date on GaN micromechanical resonators with a high frequency × Q value of 2.87 × 10 12 . With the goal of implementing an all-GaN multi-GHz oscillator, the resonator is monolithically integrated with an AlGaN/GaN high electron mobility transistor (HEMT). The results reported in this… Expand

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I consider myself very fortunate for having worked at Professor Heisenberg’s lab, and I particularly admire his capacity to deal with the most elusive questions in depth and his ability to obtain the best from every member of the lab team for the benefit of all and for the scientific breakthroughs. Expand