ALD resist formed by vapor-deposited self-assembled monolayers.

  title={ALD resist formed by vapor-deposited self-assembled monolayers.},
  author={Junsic Hong and David L. Westland Porter and Raghavasimhan Sreenivasan and P. C. Mcintyre and Stacey F Bent},
  journal={Langmuir : the ACS journal of surfaces and colloids},
  volume={23 3},
A new process of applying molecular resists to block HfO2 and Pt atomic layer deposition has been investigated. Monolayer films are formed from octadecyltrichlorosilane (ODTS) or tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) and water vapor on native silicon oxide surfaces and from 1-octadecene on hydrogen-passivated silicon surfaces through a low-pressure chemical vapor deposition process. X-ray photoelectron spectroscopy data indicates that surfaces blocked by these monolayer… CONTINUE READING