ALD of in-doped ZnO

@article{Li2016ALDOI,
  title={ALD of in-doped ZnO},
  author={Zuofeng Li and Zhangming Wu and Puhong Liao and Tan Chao and Likai Zhu and Ryan M. Kaczynski and Urs Schoop and Travis J. Anderson},
  journal={2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)},
  year={2016},
  pages={1480-1483}
}
Atomic layer deposition (ALD) windows for ZnO and ZnS films using DEZn, H2S and H2O as precursors were determined and the deposited films were characterized. Doping of ZnO with In during ALD by periodic exposure to TMIn was studied with an emphasis on the structural properties of the films. XRD results show compressive stress in the film induced by the larger In atom, which leads to smaller grain size. Based on these results stacked layers of ZnOS/ZnO:In and sputtered ZnOS/ZnO:Al were deposited… CONTINUE READING

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