ALD-based confined PCM with a metallic liner toward unlimited endurance

@article{Kim2016ALDbasedCP,
  title={ALD-based confined PCM with a metallic liner toward unlimited endurance},
  author={Wanki Kim and M. J. BrightSky and T.. Masuda and Norma Sosa and SangBum Kim and Robert L. Bruce and Fabio Carta and G. Fraczak and H. Y. Cheng and Asit Ray and Yu Zhu and H. L. Lung and K. Suu and C. H. Lam},
  journal={2016 IEEE International Electron Devices Meeting (IEDM)},
  year={2016},
  pages={4.2.1-4.2.4}
}
We present for the first time in-depth analysis of the outstanding endurance characteristics of an ALD-based confined phase change memory (PCM) [1] with a thin metallic liner. Experimental results confirm that both the proper metallic liner and the confined pore cell structure are required for a reliability advantage. This confined PCM with a metallic liner is found to be immune to classic endurance failure mechanisms. The void-free confined PCM yields a new record endurance (2×1012 cycles… CONTINUE READING