AC driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices

@article{Mani2005ACDZ,
  title={AC driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices},
  author={R. G. Mani},
  journal={Microelectronics Journal},
  year={2005},
  volume={36},
  pages={366-368}
}
Novel zero resistance states are induced by electromagnetic wave excitation in ultra high modility GaAs/AlGaAs heterostructure devices at low magnetic fields. Zero-resistance states occur about BZ(4/5)Bf and BZ(4/9)Bf, where BfZ2pfm /e, m is an electron effective mass, e is electron charge, and f is the radiation frequency. Surprisingly, the absence of… CONTINUE READING